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BI-DIRECTIONALLY C O N T R O L L E D   T H Y R I S T O R S



The BCT consists of two anti-parallel high
power thyristors integrated on a single silicon
wafer with separate gate contacts.
The reduction in component count results in
lower cost and higher reliability. For other
wafer diameters and lower voltages please
contact the factory.

 Part number
-two anti-parallel thyristors on one Si-wafer
-patented free-floating silicon technology
-designed for high power industrial and energy
 management applications
-matched Qrr values available for series connection

Table of replacement of PCTs by BCTs.
 5STB 24Q2800 replaces two 5STP 24H2800
 5STB 24N2800 replaces two 5STP 24H2800
 5STB 18N4200 replaces two 5STP 18H4200
 5STB 17N5200 replaces two 5STP 17H5200
 5STB 13N6500 replaces two 5STP 12K6500
 5STB 25U5200 replaces two 5STP 25L5200
 5STB 18U6500 replaces two 5STP 18M6500

 

 

VRM 

IRMS 

ITAVM 

ITSM 

 VTO  rT TVRM RthJCRthCH  FmHousing 
 TVJM Tc= 70°C Tc= 70°C

 8.3 ms
TVJM

 10 ms
TVJM

 TVJM

 V

A 

 A

 kA

 V

 mΩ °C

 K/Kw

 kN
 
5STB 24Q2800  2800 5840 2630

 46

 43

 0.85 0.160 125 10.0 2.0 90

 Q

 5STB 24N2800 2800 5400 2430

 46

 43

 0.85 0.160 125 11.4 2.0 90

 N

 5STB 18N4200 4200 4260 1920

 35

 32

 0.96 0.285 125 11.4 2.0 90

 N

 5STB 17N5200 5200 4000 1800

 31

 29

 1.02 0.320 125 11.4 2.0 90

 N

 5STB 13N6500 6500 3120 1405

 24

 22

 1.20 0.600 125 11.4 2.0 90

 N

 5STB 25U5200 5200 4400 1980

 45

 42

 1.06 0.219 110 8.0 1.6 135

 U

 5STB 18U6500 6500 3510 1580

 32

 30

 1.20 0.458 110 8.0 1.6 135

 U